IRFR3710ZTRPBF vs IRLR3410TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3710ZTRPBF disebabkan oleh Infineon dan IRLR3410TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR3710ZTRPBF IRLR3410TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 56 A 17 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] 60 A
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W 79 W
Suhu Hubungan Operasi -55C to +175C -55C to +175C
Technology HEXFET (IR MOSFET) HEXFET (5th generation) N-Channel MOSFET
Kemasan TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount (tape and reel)
Status RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Total Gate Charge (Qg) — 22.7 nC
Gate Drive Level — Logic level (5V capable)
RoHS Compliance — Compliant (Pb-free)
Aras MSL — 1
Avalanche Rated — Yes (UIS tested)

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