IRFR540ZTRLPBF vs IRFR3710ZTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR540ZTRLPBF disebabkan oleh Infineon dan IRFR3710ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR540ZTRLPBF IRFR3710ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC 35 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed IDM]
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical V] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 39 nC —
Power Dissipation (PD) at TC 91 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55C to +175C
Technology IR MOSFET™ / HEXFET® HEXFET (IR MOSFET)
Kemasan TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes (PBF suffix) —
Packaging Tape & Reel (TR-L), 800-piece leader/trailer —
Continuous Drain Current (ID) at TC=25C — 56 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Power Dissipation (PD) at TC=25C — 140 W
Status RoHS — Compliant
Lead-Free — Yes

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