IRFR540ZTRLPBF vs IRFR3710ZTRPBF 比較

詳細並排比較 IRFR540ZTRLPBF 由 Infineon 與 IRFR3710ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ 啟用中
Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 啟用中

規格比較

參數 IRFR540ZTRLPBF IRFR3710ZTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC 35 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed IDM]
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical V] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 39 nC —
Power Dissipation (PD) at TC 91 W —
工作接面溫度 -55 °C to +175 °C -55C to +175C
Technology IR MOSFET™ / HEXFET® HEXFET (IR MOSFET)
封裝 TO-252AA (DPAK) surface mount TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
腳位數 3 (Gate, Drain, Source) —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes (PBF suffix) —
Packaging Tape & Reel (TR-L), 800-piece leader/trailer —
Continuous Drain Current (ID) at TC=25C — 56 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Power Dissipation (PD) at TC=25C — 140 W
RoHS 狀態 — Compliant
Lead-Free — Yes

資料表與資源

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