IRFR6215TRPBF vs IRFR6215TRLPBF Perbandingan

Perbandingan bersamaan detil IRFR6215TRPBF dari Infineon dan IRFR6215TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR6215TRPBF IRFR6215TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -150 V -150 V
Continuous Drain Current (ID, Tc=25C) -13 A —
Power Dissipation (PD, Tc=25C) 110 W —
On-Resistance (RDS(on) max) 0.295 ohm at VGS = -10 V —
Gate-Source Voltage (VGS max) [DATA_NEEDED: gate-source voltage rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 44 nC —
Rentang Suhu Kerja -55C to +175C —
Paket TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Technology HEXFET (5th generation IR MOSFET) HEXFET Power MOSFET (Fifth Generation)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 1
Status RoHS Compliant (Lead-Free PBF suffix) Compliant
REACH Status Compliant —
Manufacturer Infineon (formerly International Rectifier) —
Continuous Drain Current (ID) at Tc=25C — -13 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 580 mOhm
Total Gate Charge (Qg) typ — 44 nC
Power Dissipation (PD) at Tc=25C — 110 W
Maximum Operating Junction Temperature — 175 C
Lead-Free — Yes

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