IRFS4620TRLPBF vs IRFS4321TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFS4620TRLPBF sa pamamagitan ng Infineon at IRFS4321TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFS4620TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 24 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 77.5 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge Qg | 25 nC (typical) | — |
| Gate-to-Source Charge Qgs | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge Qgd | [DATA_NEEDED: Qgd] | — |
| Power Dissipation PD at TC=25°C | 144 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | -55C to +175C |
| Packhaging | D2PAK (TO-263AB), 3-pin (2 leads + tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ | IR HEXFET (IR MOSFET) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |