IRFS4620TRLPBF vs IRFS4321TRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFS4620TRLPBF tarafından Infineon ve IRFS4321TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFS4620TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 24 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 77.5 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge Qg | 25 nC (typical) | — |
| Gate-to-Source Charge Qgs | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge Qgd | [DATA_NEEDED: Qgd] | — |
| Power Dissipation PD at TC=25°C | 144 W | — |
| İşletim Jant Sıcaklığı | -55°C to +175°C | -55C to +175C |
| Paket | D2PAK (TO-263AB), 3-pin (2 leads + tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ | IR HEXFET (IR MOSFET) |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |