IRFS4620TRLPBF vs IRFS4321TRLPBF तुलना
विस्तृत दोनों ओर की तुलना IRFS4620TRLPBF द्वारा Infineon और IRFS4321TRLPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFS4620TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 24 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 77.5 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge Qg | 25 nC (typical) | — |
| Gate-to-Source Charge Qgs | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge Qgd | [DATA_NEEDED: Qgd] | — |
| Power Dissipation PD at TC=25°C | 144 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55°C to +175°C | -55C to +175C |
| पैकेज | D2PAK (TO-263AB), 3-pin (2 leads + tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ | IR HEXFET (IR MOSFET) |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL स्तर | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |