IRFZ44NSTRLPBF vs IRLZ34NPBF 比較

詳細並排比較 IRFZ44NSTRLPBF 由 Infineon 與 IRLZ34NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFZ44NSTRLPBF IRLZ34NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 49 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V —
Total Gate Charge (Qg) 42 nC 16.7 nC (typical)
Power Dissipation (TC) 94 W —
Power Dissipation (TA) 3.8 W —
工作溫度範圍 -55C to +175C —
封裝 D2PAK (TO-263) TO-220AB (through-hole, 3 leads + tab)
安裝類型 Surface Mount Through Hole
Technology HEXFET —
RoHS 狀態 Compliant Compliant (Pb-free PBF suffix)
Lead-Free (PBF suffix) Yes —
Manufacturer — Infineon (formerly International Rectifier)
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
電晶體類型 — N-Channel HEXFET Power MOSFET
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Power Dissipation (PD) at Tc=25 C — 68 W
工作接面溫度 — -55 C to +175 C
MSL 等級 — Not applicable (through-hole)

資料表與資源

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