IRFZ44NSTRLPBF vs IRLZ34NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NSTRLPBF sa pamamagitan ng Infineon at IRLZ34NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFZ44NSTRLPBF - 55V 49A N-Channel HEXFET MOSFET D2PAK | Infineon
IRFZ44NSTRLPBF ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IRFZ44NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 16.7 nC (typical) |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | D2PAK (TO-263) | TO-220AB (through-hole, 3 leads + tab) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Technology | HEXFET | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free (PBF suffix) | Yes | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Uri ng Transistor | — | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Level ng MSL | — | Not applicable (through-hole) |