IRL2910STRLPBF vs IRFB7545PBF Comparison

Detailed side-by-side comparison of IRL2910STRLPBF by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRL2910STRLPBF IRFB7545PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.95
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (Infineon/IR) StrongIRFETβ„’ (HEXFET, N-Channel)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) @ TC=25C 55 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 380 A
On-Resistance Rds(on) max @ VGS=10V 26 mOhm β€”
Gate Threshold Voltage VGS(th) typ Logic-level (1V-2V) β€”
Total Gate Charge (Qg) 93.3 nC β€”
Power Dissipation @ TA=25C 3.8 W β€”
Power Dissipation @ TC=25C 200 W β€”
Package D2PAK (TO-263) Surface Mount TO-220AB (Through-Hole)
Mounting Type Surface Mount Through Hole (THT)
Operating Temperature Range -55C to +175C (TJ) β€”
RoHS Status Compliant β€”
Halogen Free Compliant (per GlobalSpec) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IRFB7545PBF
Polarity β€” N-Channel
VDS (Drain-Source Voltage) max β€” 60 V
VGS (Gate-Source Voltage) max β€” Β±20 V
RDS(on) max at VGS=10V β€” 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C β€” 95 A
Single-Pulse Avalanche Current (IAS) β€” 57 A
Power Dissipation (PD) at Tc=25C β€” 125 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Operating Junction Temperature β€” -55C to +175C
Lead-Free / RoHS β€” Yes (Lead-Free, PBF suffix)
MSL Level β€” N/A (Through-Hole)
Gate Drive Voltage (typical) β€” 10 V
Avalanche Energy Rated β€” Yes

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