IRL2910STRLPBF vs IRFB7545PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL2910STRLPBF disebabkan oleh Infineon dan IRFB7545PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRL2910STRLPBF | IRFB7545PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Infineon/IR) | StrongIRFET™ (HEXFET, N-Channel) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 380 A |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | — |
| Total Gate Charge (Qg) | 93.3 nC | — |
| Power Dissipation @ TA=25C | 3.8 W | — |
| Power Dissipation @ TC=25C | 200 W | — |
| Kemasan | D2PAK (TO-263) Surface Mount | TO-220AB (Through-Hole) |
| Jenis Pemasangan | Surface Mount | Through Hole (THT) |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | — |
| Status RoHS | Compliant | — |
| Boson Bebas | Compliant (per GlobalSpec) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7545PBF |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| Aras MSL | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |