IRL2910STRLPBF vs IRFB7545PBF 比較
詳細並排比較 IRL2910STRLPBF 由 Infineon 與 IRFB7545PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRL2910STRLPBF | IRFB7545PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (Infineon/IR) | StrongIRFET™ (HEXFET, N-Channel) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 380 A |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | — |
| Total Gate Charge (Qg) | 93.3 nC | — |
| Power Dissipation @ TA=25C | 3.8 W | — |
| Power Dissipation @ TC=25C | 200 W | — |
| 封裝 | D2PAK (TO-263) Surface Mount | TO-220AB (Through-Hole) |
| 安裝類型 | Surface Mount | Through Hole (THT) |
| 工作溫度範圍 | -55C to +175C (TJ) | — |
| RoHS 狀態 | Compliant | — |
| 無鹵素 | Compliant (per GlobalSpec) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7545PBF |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| 工作接面溫度 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| MSL 等級 | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |