IRL2910STRLPBF vs IRFB7545PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRL2910STRLPBF sa pamamagitan ng Infineon at IRFB7545PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRL2910STRLPBF IRFB7545PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology HEXFET (Infineon/IR) StrongIRFET™ (HEXFET, N-Channel)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25C 55 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 380 A
On-Resistance Rds(on) max @ VGS=10V 26 mOhm —
Gate Threshold Voltage VGS(th) typ Logic-level (1V-2V) —
Total Gate Charge (Qg) 93.3 nC —
Power Dissipation @ TA=25C 3.8 W —
Power Dissipation @ TC=25C 200 W —
Packhaging D2PAK (TO-263) Surface Mount TO-220AB (Through-Hole)
Uri ng Pagpapasok Surface Mount Through Hole (THT)
Hanay ng Temperature na Operasyon -55C to +175C (TJ) —
Tindminan RoHS Compliant —
Wala sa Halogen Compliant (per GlobalSpec) —
Manufacturer — Infineon Technologies
Part Number — IRFB7545PBF
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Temperature ng Junction na Operasyon — -55C to +175C
Lead-Free / RoHS — Yes (Lead-Free, PBF suffix)
Level ng MSL — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

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