IRL2910STRLPBF vs IRL2910STRRPBF Comparison
Detailed side-by-side comparison of IRL2910STRLPBF by Infineon and IRL2910STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL2910STRLPBF | IRL2910STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Infineon/IR) | IR MOSFET™ (Planar HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | — |
| Total Gate Charge (Qg) | 93.3 nC | — |
| Power Dissipation @ TA=25C | 3.8 W | — |
| Power Dissipation @ TC=25C | 200 W | — |
| Package | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ) | — |
| RoHS Status | Compliant | — |
| Halogen Free | Compliant (per GlobalSpec) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 55 A |
| RDS(on) Max at VGS=10 V | — | 26 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 200 W |
| Configuration | — | Single with built-in body diode |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Terminal Finish | — | Matte Tin over Nickel |
| Lead-Free / RoHS Status | — | Yes (PBF suffix) |
| MSL Level | — | 1 (per JEDEC J-STD-020) |