IRL2910STRLPBF vs IRL2910STRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL2910STRLPBF disebabkan oleh Infineon dan IRL2910STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRL2910STRLPBF | IRL2910STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Infineon/IR) | IR MOSFET™ (Planar HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | — |
| Total Gate Charge (Qg) | 93.3 nC | — |
| Power Dissipation @ TA=25C | 3.8 W | — |
| Power Dissipation @ TC=25C | 200 W | — |
| Kemasan | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | — |
| Status RoHS | Compliant | — |
| Boson Bebas | Compliant (per GlobalSpec) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 55 A |
| RDS(on) Max at VGS=10 V | — | 26 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 200 W |
| Configuration | — | Single with built-in body diode |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Terminal Finish | — | Matte Tin over Nickel |
| Lead-Free / RoHS Status | — | Yes (PBF suffix) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |