IRL2910STRLPBF vs IRL2910STRRPBF 比較
詳細並排比較 IRL2910STRLPBF 由 Infineon 與 IRL2910STRRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRL2910STRLPBF | IRL2910STRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Infineon/IR) | IR MOSFET™ (Planar HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | — |
| Total Gate Charge (Qg) | 93.3 nC | — |
| Power Dissipation @ TA=25C | 3.8 W | — |
| Power Dissipation @ TC=25C | 200 W | — |
| 封裝 | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (TJ) | — |
| RoHS 狀態 | Compliant | — |
| 無鹵素 | Compliant (per GlobalSpec) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 55 A |
| RDS(on) Max at VGS=10 V | — | 26 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 200 W |
| Configuration | — | Single with built-in body diode |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Terminal Finish | — | Matte Tin over Nickel |
| Lead-Free / RoHS Status | — | Yes (PBF suffix) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |