IRL2910STRLPBF vs IRL2910STRRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRL2910STRLPBF sa pamamagitan ng Infineon at IRL2910STRRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRL2910STRRPBF IRL2910STRRPBF - 100V, 55A N-Ch MOSFET | Infineon | D2PAK

IRL2910STRRPBF - 100V, 55A N-Ch MOSFET | Infineon | D2PAK

IRL2910STRRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRL2910STRLPBF IRL2910STRRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Infineon/IR) IR MOSFET™ (Planar HEXFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25C 55 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ VGS=10V 26 mOhm —
Gate Threshold Voltage VGS(th) typ Logic-level (1V-2V) —
Total Gate Charge (Qg) 93.3 nC —
Power Dissipation @ TA=25C 3.8 W —
Power Dissipation @ TC=25C 200 W —
Packhaging D2PAK (TO-263) Surface Mount D2PAK (TO-263) Surface Mount
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (TJ) —
Tindminan RoHS Compliant —
Wala sa Halogen Compliant (per GlobalSpec) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 55 A
RDS(on) Max at VGS=10 V — 26 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level)
Power Dissipation (Ta) — 3.8 W
Power Dissipation (Tc) — 200 W
Configuration — Single with built-in body diode
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Terminal Finish — Matte Tin over Nickel
Lead-Free / RoHS Status — Yes (PBF suffix)
Level ng MSL — 1 (per JEDEC J-STD-020)

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