IRL2910STRRPBF vs IRL2910STRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRL2910STRRPBF sa pamamagitan ng Infineon at IRL2910STRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRL2910STRRPBF IRL2910STRRPBF - 100V, 55A N-Ch MOSFET | Infineon | D2PAK

IRL2910STRRPBF - 100V, 55A N-Ch MOSFET | Infineon | D2PAK

IRL2910STRRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRL2910STRRPBF IRL2910STRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology IR MOSFET™ (Planar HEXFET) HEXFET (Infineon/IR)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 55 A —
RDS(on) Max at VGS=10 V 26 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level) —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 200 W —
Configuration Single with built-in body diode —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging D2PAK (TO-263) Surface Mount D2PAK (TO-263) Surface Mount
Uri ng Pagpapasok Surface Mount Surface Mount
Terminal Finish Matte Tin over Nickel —
Lead-Free / RoHS Status Yes (PBF suffix) —
Level ng MSL 1 (per JEDEC J-STD-020) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 55 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ VGS=10V — 26 mOhm
Gate Threshold Voltage VGS(th) typ — Logic-level (1V-2V)
Total Gate Charge (Qg) — 93.3 nC
Power Dissipation @ TA=25C — 3.8 W
Power Dissipation @ TC=25C — 200 W
Hanay ng Temperature na Operasyon — -55C to +175C (TJ)
Tindminan RoHS — Compliant
Wala sa Halogen — Compliant (per GlobalSpec)

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