IRLML5103TRPBF vs IRLML0030TRPBF Comparison
Detailed side-by-side comparison of IRLML5103TRPBF by Infineon and IRLML0030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML5103TRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.05 | $0.13 |
| Transistor Type | P-Channel MOSFET | β |
| Maximum Drain-Source Voltage | 30 V | β |
| Continuous Drain Current | 760 mA at Ta | β |
| Power Dissipation | 540 mW at Ta | β |
| Maximum On-Resistance | 600 mOhm | β |
| Gate Charge | 3.4 nC | β |
| Technology | IR MOSFET | IR HEXFET Power MOSFET |
| Package | Micro3/SOT-23 | Micro3 / SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | P-Channel | β |
| Drain-Source Voltage Rating | -30 V | β |
| Channel Mode | Enhancement | β |
| Operating Temperature | 175 C | β |
| RoHS Status | Compliant | Compliant |
| Footprint | SOT-23 | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | β | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | β | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | β | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | β | 1.3 W |
| Operating Temperature Range | β | -55C to +150C |
| MSL Level | β | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | β | Wave-solder capable |
| Qualification | β | JEDEC standard |