IRLML5103TRPBF vs IRLML0030TRPBF Perbandingan
Perbandingan bersamaan detil IRLML5103TRPBF dari Infineon dan IRLML0030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML5103TRPBF | IRLML0030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | P-Channel MOSFET | — |
| Maximum Drain-Source Voltage | 30 V | — |
| Continuous Drain Current | 760 mA at Ta | — |
| Power Dissipation | 540 mW at Ta | — |
| Maximum On-Resistance | 600 mOhm | — |
| Gate Charge | 3.4 nC | — |
| Technology | IR MOSFET | IR HEXFET Power MOSFET |
| Paket | Micro3/SOT-23 | Micro3 / SOT-23 (3-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Polarity | P-Channel | — |
| Drain-Source Voltage Rating | -30 V | — |
| Channel Mode | Enhancement | — |
| Suhu Kerja | 175 C | — |
| Status RoHS | Compliant | Compliant |
| Footprint | SOT-23 | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| Rentang Suhu Kerja | — | -55C to +150C |
| Level MSL | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |