IRLML5103TRPBF vs IRLML0030TRPBF 比較
詳細並排比較 IRLML5103TRPBF 由 Infineon 與 IRLML0030TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLML5103TRPBF | IRLML0030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | P-Channel MOSFET | — |
| Maximum Drain-Source Voltage | 30 V | — |
| Continuous Drain Current | 760 mA at Ta | — |
| Power Dissipation | 540 mW at Ta | — |
| Maximum On-Resistance | 600 mOhm | — |
| Gate Charge | 3.4 nC | — |
| Technology | IR MOSFET | IR HEXFET Power MOSFET |
| 封裝 | Micro3/SOT-23 | Micro3 / SOT-23 (3-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| Polarity | P-Channel | — |
| Drain-Source Voltage Rating | -30 V | — |
| Channel Mode | Enhancement | — |
| 工作溫度 | 175 C | — |
| RoHS 狀態 | Compliant | Compliant |
| Footprint | SOT-23 | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| 工作溫度範圍 | — | -55C to +150C |
| MSL 等級 | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |