IRLR3410TRLPBF vs IAUC100N10S5N040ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3410TRLPBF sa pamamagitan ng Infineon at IAUC100N10S5N040ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLR3410TRLPBF IRLR3410TRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon

IRLR3410TRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon

IRLR3410TRLPBF ✓ Nakahanda
Infineon
IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLR3410TRLPBF IAUC100N10S5N040ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET OptiMOS-5
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) 60 A 400 A
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC [DATA_NEEDED: Qg value]
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK), surface mount PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Uri ng Pagpapasok Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
Level ng MSL 1 MSL1 (up to 260C peak reflow)
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Hanay ng Temperature na Operasyon — -55C to +175C (junction)
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection
Tindminan RoHS — Compliant

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