IRLR3410TRLPBF vs IAUC100N10S5N040ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRLPBF disebabkan oleh Infineon dan IAUC100N10S5N040ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR3410TRLPBF IAUC100N10S5N040ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET OptiMOS-5
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) 60 A 400 A
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC [DATA_NEEDED: Qg value]
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK), surface mount PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Jenis Pemasangan Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
Aras MSL 1 MSL1 (up to 260C peak reflow)
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Gambaran Suhu Operasi — -55C to +175C (junction)
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection
Status RoHS — Compliant

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