IS43TR16256AL-125KBL vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ Active
Specification Comparison
| Parameter | IS43TR16256AL-125KBL | K4B4G1646E-BYMA |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $14.32 |
| Memory Type | SDRAM - DDR3L | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | — |
| Interface | Parallel | — |
| Clock Frequency | 800 MHz | 933 MHz |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35V (backward compatible to 1.5V) | 1.35 V (1.28 V to 1.575 V) |
| Package | 96-TWBGA (9x13mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 95°C | 0°C to +95°C |
| Memory Format | DRAM | — |
| Technology | SDRAM - DDR3L | — |
| Data Rate | 1600 Mbps | 1866 Mbps/pin |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Number of Terminals | 96 | — |
| Density | — | 4 Gb |
| Organization | — | 256M x 16 |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | [DATA_NEEDED: Burst Length] |
| Number of Pins | — | 96 |