ISA150233C03LMDSXTMA1 vs IRF7341GTRPBF Comparison

Detailed side-by-side comparison of ISA150233C03LMDSXTMA1 by Infineon and IRF7341GTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 βœ“ Active

Specification Comparison

Parameter ISA150233C03LMDSXTMA1 IRF7341GTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.76
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 3 β€”
Configuration Dual N-channel + P-channel (1 N + 1 P) Dual N-Channel
Drain-Source Voltage (VDS) 30 V 55 V
N-channel Continuous Drain Current (Ta) 7.6 A β€”
N-channel Continuous Drain Current (Tc) 10.2 A β€”
P-channel Continuous Drain Current (Ta) 6.6 A β€”
P-channel Continuous Drain Current (Tc) 8.8 A β€”
Total Power Dissipation (Ta) 1.4 W β€”
Total Power Dissipation (Tc) 2.5 W β€”
Package PG-DSO-8-920 (SO-8 with thermal pad) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Marking Code 1523C03L β€”
Technology OptiMOS 3 trench MOSFET IR HEXFET Planar MOSFET
Channel Type N-channel + P-channel enhancement mode β€”
Operating Temperature Range -55 C to +150 C (junction) -55 C to +175 C
RoHS Status Compliant Compliant
Continuous Drain Current (ID) β€” 5.1 A
On-Resistance (RDS(on)) max β€” 50 mOhm at VGS=10V
Power Dissipation (PD) β€” 2.4 W
Maximum Junction Temperature β€” 175 C
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Lead-Free β€” Yes (PBF suffix)

Datasheets & Resources

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