ISA150233C03LMDSXTMA1 vs IRF7341GTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISA150233C03LMDSXTMA1 disebabkan oleh Infineon dan IRF7341GTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISA150233C03LMDSXTMA1 IRF7341GTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (1 N + 1 P) Dual N-Channel
Drain-Source Voltage (VDS) 30 V 55 V
N-channel Continuous Drain Current (Ta) 7.6 A —
N-channel Continuous Drain Current (Tc) 10.2 A —
P-channel Continuous Drain Current (Ta) 6.6 A —
P-channel Continuous Drain Current (Tc) 8.8 A —
Total Power Dissipation (Ta) 1.4 W —
Total Power Dissipation (Tc) 2.5 W —
Kemasan PG-DSO-8-920 (SO-8 with thermal pad) 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Marking Code 1523C03L —
Technology OptiMOS 3 trench MOSFET IR HEXFET Planar MOSFET
Channel Type N-channel + P-channel enhancement mode —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55 C to +175 C
Status RoHS Compliant Compliant
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Lead-Free — Yes (PBF suffix)

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