ISA150233C03LMDSXTMA1 vs IRF7341GTRPBF Perbandingan
Perbandingan bersamaan detil ISA150233C03LMDSXTMA1 dari Infineon dan IRF7341GTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | ISA150233C03LMDSXTMA1 | IRF7341GTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (1 N + 1 P) | Dual N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 55 V |
| N-channel Continuous Drain Current (Ta) | 7.6 A | — |
| N-channel Continuous Drain Current (Tc) | 10.2 A | — |
| P-channel Continuous Drain Current (Ta) | 6.6 A | — |
| P-channel Continuous Drain Current (Tc) | 8.8 A | — |
| Total Power Dissipation (Ta) | 1.4 W | — |
| Total Power Dissipation (Tc) | 2.5 W | — |
| Paket | PG-DSO-8-920 (SO-8 with thermal pad) | 8-SO (SOIC-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Marking Code | 1523C03L | — |
| Technology | OptiMOS 3 trench MOSFET | IR HEXFET Planar MOSFET |
| Channel Type | N-channel + P-channel enhancement mode | — |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55 C to +175 C |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) | — | 5.1 A |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Lead-Free | — | Yes (PBF suffix) |