ISA150233C03LMDSXTMA1 vs IRF7341GTRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma ISA150233C03LMDSXTMA1 tarafından Infineon ve IRF7341GTRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | ISA150233C03LMDSXTMA1 | IRF7341GTRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (1 N + 1 P) | Dual N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 55 V |
| N-channel Continuous Drain Current (Ta) | 7.6 A | — |
| N-channel Continuous Drain Current (Tc) | 10.2 A | — |
| P-channel Continuous Drain Current (Ta) | 6.6 A | — |
| P-channel Continuous Drain Current (Tc) | 8.8 A | — |
| Total Power Dissipation (Ta) | 1.4 W | — |
| Total Power Dissipation (Tc) | 2.5 W | — |
| Paket | PG-DSO-8-920 (SO-8 with thermal pad) | 8-SO (SOIC-8) |
| Montaj Türü | Surface Mount | Surface Mount |
| Marking Code | 1523C03L | — |
| Technology | OptiMOS 3 trench MOSFET | IR HEXFET Planar MOSFET |
| Channel Type | N-channel + P-channel enhancement mode | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C (junction) | -55 C to +175 C |
| RoHS Durumu | Compliant | Compliant |
| Continuous Drain Current (ID) | — | 5.1 A |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Lead-Free | — | Yes (PBF suffix) |