ISC009N06NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC009N06NM6ATMA1 sa pamamagitan ng Infineon at IQEH50NE2LM7ZCGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC009N06NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 7 Power-Transistor |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 40 A | — |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | — |
| Power Dissition (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 221 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55 degrees C to +175 degrees C |
| Packhaging | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TTFN-9-3 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Technology | — | OptiMOS 7 (Trench-Gate) |
| Qualification | — | Industrial grade per Infineon datasheet |