ISC009N06NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC009N06NM6ATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC009N06NM6ATMA1 ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon

ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon

ISC009N06NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC009N06NM6ATMA1 IQEH50NE2LM7ZCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60 V OptiMOS 7 Power-Transistor
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta=25C 40 A —
Pulsed Drain Current (IDM) at Tc=25C 344 A —
Power Dissition (PD) at Ta=25C 3 W —
Power Dissipation (PD) at Tc=25C 221 W —
Gate-to-Source Voltage (VGS) ±20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) typical value at VGS=10 V] —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Gambaran Suhu Operasi -55 °C to +175 °C -55 degrees C to +175 degrees C
Kemasan PG-TDSON-8 (3.3 x 3.3 mm) PG-TTFN-9-3
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Boson Bebas Yes —
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 status] —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 150 W
Maximum Junction Temperature — +175 degrees C
Technology — OptiMOS 7 (Trench-Gate)
Qualification — Industrial grade per Infineon datasheet

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