ISC011N04NM7VATMA1 vs IAUTN04S7N003ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N04NM7VATMA1 dari Infineon dan IAUTN04S7N003ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC011N04NM7VATMA1 IAUTN04S7N003ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon OptiMOS 7 N-Channel Trench MOSFET
Paket PG-TDSON-8 (source-down) PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount)
Tipe Mounting Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55 °C to +175 °C (Tj)
RoHS Compliance Compliant (per Infineon product page) —
Level MSL MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID) at Tj — 350 A
Power Dissipation (PD) at Tc=25°C — 357 W
RDS(on) max at VGS=10V — 0.24 mOhm (typical)
Gate-Source Voltage (VGS) max — ±20 V
Avalanche Single-Pulse Current — [DATA_NEEDED: IAS]
Body Diode Continuous Forward Current — 350 A (Tj = 25 °C)
Body Diode Pulse Current — 3510 A (tp = 100 µs, Tj = 25 °C)
Body Diode Forward Voltage (VSD) — 0.95 V max (0.8 V typ) at IS = 100 A
Reverse Recovery Time (trr) — 83 ns typical / 125 ns max
Reverse Recovery Charge (Qrr) — 126 nC typical / 252 nC max
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant

Spek dan Sumber

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