ISC011N04NM7VATMA1 vs IAUTN04S7N003ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N04NM7VATMA1 disebabkan oleh Infineon dan IAUTN04S7N003ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC011N04NM7VATMA1 | IAUTN04S7N003ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS 7 N-Channel Trench MOSFET |
| Kemasan | PG-TDSON-8 (source-down) | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (TJ) | -55 °C to +175 °C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| Aras MSL | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tj | — | 350 A |
| Power Dissipation (PD) at Tc=25°C | — | 357 W |
| RDS(on) max at VGS=10V | — | 0.24 mOhm (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Single-Pulse Current | — | [DATA_NEEDED: IAS] |
| Body Diode Continuous Forward Current | — | 350 A (Tj = 25 °C) |
| Body Diode Pulse Current | — | 3510 A (tp = 100 µs, Tj = 25 °C) |
| Body Diode Forward Voltage (VSD) | — | 0.95 V max (0.8 V typ) at IS = 100 A |
| Reverse Recovery Time (trr) | — | 83 ns typical / 125 ns max |
| Reverse Recovery Charge (Qrr) | — | 126 nC typical / 252 nC max |
| Automotive Qualification | — | AEC-Q101 qualified |
| Status RoHS | — | Compliant |