ISC110N12NM6ATMA1 vs ISC0805NLSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC110N12NM6ATMA1 sa pamamagitan ng Infineon at ISC0805NLSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC110N12NM6ATMA1 ISC110N12NM6ATMA1 - 120V 9.8mΩ OptiMOS 6 N-MOSFET | Infineon

ISC110N12NM6ATMA1 - 120V 9.8mΩ OptiMOS 6 N-MOSFET | Infineon

ISC110N12NM6ATMA1 ✓ Nakahanda
Infineon
ISC0805NLSATMA1 ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC110N12NM6ATMA1 ISC0805NLSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Ta 11 A —
Continuous Drain Current (ID) at Tc 62 A —
On-Resistance RDS(on) max at VGS=10V 9.8 mΩ 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ 3.1 V —
Total Gate Charge (Qg) 15.4 nC —
Input Capacitance (Ciss) 1.1 nF —
Output Capacitance (Coss) 330 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Power Dissipation (Pd) at Tc 94 W —
Power Dissipation (Pd) at Ta 3 W —
Avalanche Energy (EAS) 185 mJ —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging SuperSO8 (TDSON-8) PG-TDSON-8-46 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 5
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 13 A
Continuous Drain Current (ID) at TC=25°C — 71 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 74 W
On-Resistance RDS(on) max at VGS=4.5V — 10.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.3 V
Gate Charge Qg typ at VGS=4.5V — 16 nC
Input Capacitance Ciss — 2.2 nF
Reverse Transfer Capacitance Crss — 23 pF
Output Capacitance Coss — 360 pF
Hanay ng Temperature na Operasyon — -55 °C to +150 °C

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