ISC110N12NM6ATMA1 vs ISC0805NLSATMA1 Perbandingan

Perbandingan bersamaan detil ISC110N12NM6ATMA1 dari Infineon dan ISC0805NLSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC110N12NM6ATMA1 ISC0805NLSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Ta 11 A —
Continuous Drain Current (ID) at Tc 62 A —
On-Resistance RDS(on) max at VGS=10V 9.8 mΩ 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ 3.1 V —
Total Gate Charge (Qg) 15.4 nC —
Input Capacitance (Ciss) 1.1 nF —
Output Capacitance (Coss) 330 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Power Dissipation (Pd) at Tc 94 W —
Power Dissipation (Pd) at Ta 3 W —
Avalanche Energy (EAS) 185 mJ —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket SuperSO8 (TDSON-8) PG-TDSON-8-46 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 5
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 13 A
Continuous Drain Current (ID) at TC=25°C — 71 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 74 W
On-Resistance RDS(on) max at VGS=4.5V — 10.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.3 V
Gate Charge Qg typ at VGS=4.5V — 16 nC
Input Capacitance Ciss — 2.2 nF
Reverse Transfer Capacitance Crss — 23 pF
Output Capacitance Coss — 360 pF
Rentang Suhu Kerja — -55 °C to +150 °C

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