ISC110N12NM6ATMA1 vs ISC0805NLSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC110N12NM6ATMA1 disebabkan oleh Infineon dan ISC0805NLSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC110N12NM6ATMA1 ISC0805NLSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Ta 11 A —
Continuous Drain Current (ID) at Tc 62 A —
On-Resistance RDS(on) max at VGS=10V 9.8 mΩ 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ 3.1 V —
Total Gate Charge (Qg) 15.4 nC —
Input Capacitance (Ciss) 1.1 nF —
Output Capacitance (Coss) 330 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Power Dissipation (Pd) at Tc 94 W —
Power Dissipation (Pd) at Ta 3 W —
Avalanche Energy (EAS) 185 mJ —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan SuperSO8 (TDSON-8) PG-TDSON-8-46 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 5
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 13 A
Continuous Drain Current (ID) at TC=25°C — 71 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 74 W
On-Resistance RDS(on) max at VGS=4.5V — 10.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.3 V
Gate Charge Qg typ at VGS=4.5V — 16 nC
Input Capacitance Ciss — 2.2 nF
Reverse Transfer Capacitance Crss — 23 pF
Output Capacitance Coss — 360 pF
Gambaran Suhu Operasi — -55 °C to +150 °C

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