ISZ023N06LM6ATMA1 vs ISZ072N06NM6ATMA1 Comparison

Detailed side-by-side comparison of ISZ023N06LM6ATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ023N06LM6ATMA1

ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon

ISZ023N06LM6ATMA1 βœ“ Active
Infineon
ISZ072N06NM6ATMA1

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ023N06LM6ATMA1 ISZ072N06NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 60 V β€”
Part Number ISZ023N06LM6 β€”
Orderable Part Number ISZ023N06LM6ATMA1 β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 24 A β€”
Pulsed Drain Current (ID, Tc) 149 A β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 100 W β€”
Package PG-TSDSON-8-34 (Surface Mount) PG-TSDSON-8-34 (TSDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
MSL Level 1 1
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Configuration Single β€”
Product Family β€” OptiMOS 6 60V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID, Tc=25Β°C) β€” 57 A
Continuous Drain Current (ID, Ta) β€” 12.7 A
RDS(on) max @ VGS=10V β€” 7.2 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 3.3 V (typ)
Power Dissipation (Tc=25Β°C) β€” 50 W
Operating Temperature Range β€” -55C to +175C ( Tj max 175C )

Datasheets & Resources

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