K4A4G085WG-BCWE vs K4A4G085WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G085WG-BCWE by Samsung Electronics and K4A4G085WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WG-BCWE | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.68 | $3.58 |
| Memory Type | DDR4 SDRAM (Volatile) | DDR4 SDRAM (D-die) |
| Memory Size | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Data Rate | 3200 Mbps/pin | 2400 Mb/s (PC2400) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| Package | FBGA-78 (BCW) | FBGA-78 (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | Parallel |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: Refresh specification] |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Memory Density | — | 4 Gbit |
| Organization | — | 512M x 8 |
| Supply Voltage | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Operating Temperature Range | — | [DATA_NEEDED: Operating Temperature Range] |
| MSL Level | — | [DATA_NEEDED: MSL Level] |