K4A8G045WB-BCRC vs K4A8G045WB-BCPB Comparison

Detailed side-by-side comparison of K4A8G045WB-BCRC by Samsung Electronics and K4A8G045WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Active
Samsung Electronics
K4A8G045WB-BCPB K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB ✓ Active

Specification Comparison

Parameter K4A8G045WB-BCRC K4A8G045WB-BCPB
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status — In Stock
Unit Price (USD) — $9.02
Memory Type DDR4 SDRAM DDR4 SDRAM (B-die)
Density 8 Gb 8 Gb
Organization 2G x 4 2G x 4
Speed 2400 Mbps —
Supply Voltage (VDD/VDDQ) 1.2 V —
Process Technology Samsung B-die —
Interface CMOS, differential clock (CK/CK#) —
Refresh Cycles 8192 8192
Maximum Supply Current 211.7 mA —
Operating Temperature 0 C to 85 C 0C to +85C
Package 78-ball FBGA (PBGA78) 78-ball FBGA
Terminals 78 —
Mounting Type Surface Mount Surface Mount
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset —
DLL Mode Timing specified for DLL-enabled operation —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Data Rate — 2133 Mbps/pin (PC4-2133)
Supply Voltage (VDD) — 1.2 V
Prefetch Architecture — 8n
Burst Length — BL8, BC4 (burst chop)
Refresh Modes — Auto-refresh, Self-refresh
Termination — On-Die Termination (ODT)
Reset — Asynchronous Reset
Clocking — Differential clocks (CK/CK#)
Max Supply Current — 211.7 mA
Features — Posted CAS, Programmable CWL, Internal (Self) Calibration

Datasheets & Resources

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