K4A8G045WB-BCRC vs K4A8G045WB-BCPB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G045WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G045WB-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Aktif
Samsung Electronics
K4A8G045WB-BCPB K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G045WB-BCRC K4A8G045WB-BCPB
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $9.02
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM (B-die)
Density 8 Gb 8 Gb
Organisasi 2G x 4 2G x 4
Speed 2400 Mbps —
Supply Voltage (VDD/VDDQ) 1.2 V —
Process Technology Samsung B-die —
Antaramuka CMOS, differential clock (CK/CK#) —
Refresh Cycles 8192 8192
Maximum Supply Current 211.7 mA —
Suhu Operasi 0 C to 85 C 0C to +85C
Kemasan 78-ball FBGA (PBGA78) 78-ball FBGA
Terminals 78 —
Jenis Pemasangan Surface Mount Surface Mount
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset —
DLL Mode Timing specified for DLL-enabled operation —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Kadar Data — 2133 Mbps/pin (PC4-2133)
Supply Voltage (VDD) — 1.2 V
Prefetch Architecture — 8n
Burst Length — BL8, BC4 (burst chop)
Refresh Modes — Auto-refresh, Self-refresh
Termination — On-Die Termination (ODT)
Reset — Asynchronous Reset
Clocking — Differential clocks (CK/CK#)
Max Supply Current — 211.7 mA
Ciri-ciri — Posted CAS, Programmable CWL, Internal (Self) Calibration

Laporan Datasheet & Sumber

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