K4A8G045WB-BCRC vs K4A8G085WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G045WB-BCRC by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ Active
Specification Comparison
| Parameter | K4A8G045WB-BCRC | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $4.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| Organization | 2G x 4 | — |
| Speed | 2400 Mbps | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V | — |
| Process Technology | Samsung B-die | — |
| Interface | CMOS, differential clock (CK/CK#) | DDR4 SDRAM parallel interface |
| Refresh Cycles | 8192 | 8192 |
| Maximum Supply Current | 211.7 mA | — |
| Operating Temperature | 0 C to 85 C | 0C to +85C |
| Package | 78-ball FBGA (PBGA78) | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Terminals | 78 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Key DDR4 Features | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset | — |
| DLL Mode | Timing specified for DLL-enabled operation | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Supply Voltage | — | 1.2 V |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Operating Temperature Grade | — | Commercial (0C to 85C) |