K4A8G045WB-BCRC vs K4A8G085WB-BCPB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G045WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G085WB-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Aktif
Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 1Gx8 1.2V | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 1Gx8 1.2V | Samsung

K4A8G085WB-BCPB ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G045WB-BCRC K4A8G085WB-BCPB
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $4.10
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM (volatile DRAM)
Density 8 Gb —
Organisasi 2G x 4 —
Speed 2400 Mbps —
Supply Voltage (VDD/VDDQ) 1.2 V —
Process Technology Samsung B-die —
Antaramuka CMOS, differential clock (CK/CK#) DDR4 SDRAM parallel interface
Refresh Cycles 8192 8192
Maximum Supply Current 211.7 mA —
Suhu Operasi 0 C to 85 C 0C to +85C
Kemasan 78-ball FBGA (PBGA78) 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length
Terminals 78 —
Jenis Pemasangan Surface Mount Surface Mount
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset —
DLL Mode Timing specified for DLL-enabled operation —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Saiz Ingatan — 8 Gb
Memory Organization — 1G x 8
Tegangan Pemberi Arus — 1.2 V
Max Clock Frequency — 1066 MHz
Max Access Time — 0.18 ns
Max Standby Current — 0.016 mA
Technology — CMOS, 8Gb B-die
Number of Terminals — 78
Operating Temperature Grade — Commercial (0C to 85C)

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