K4A8G045WB-BCRC vs K4A8G165WB-BCRC 比較
詳細並排比較 K4A8G045WB-BCRC 由 Samsung Electronics 與 K4A8G165WB-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G045WB-BCRC | K4A8G165WB-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| 組織 | 2G x 4 | — |
| Speed | 2400 Mbps | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V | — |
| Process Technology | Samsung B-die | — |
| 介面 | CMOS, differential clock (CK/CK#) | Parallel (DDR4 SDRAM bus) |
| Refresh Cycles | 8192 | — |
| Maximum Supply Current | 211.7 mA | — |
| 工作溫度 | 0 C to 85 C | -40C to +95C |
| 封裝 | 78-ball FBGA (PBGA78) | 96-ball FBGA (PBGA96) |
| Terminals | 78 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Key DDR4 Features | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset | — |
| DLL Mode | Timing specified for DLL-enabled operation | — |
| RoHS 狀態 | Compliant | — |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| 資料速率 | — | 2400 Mbps/pin (DDR4-2400) |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |