K4A8G045WB vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G045WB by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G045WB | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.27 | $4.96 |
| Memory Type | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 2G x 4 | 1G x 8 |
| Data Rate | 2133 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V | 1.2V |
| Max Supply Current | 211.7 mA | 170mA |
| Operating Temperature | 0 C to +85 C | 0°C to 85°C |
| Package | 78-ball FBGA | 78-ball FBGA |
| Refresh Cycles | 8192 | — |
| Mounting Type | Surface Mount | — |
| Number of Terminals | 78 | — |
| Clocking | Differential clock (CK / CK#) | — |
| On-Die Termination | Yes (ODT pin) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Programmable CWL | Yes | — |
| Internal (Self) Calibration | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Burst Length | — | BL8, BL16 |
| CAS Latency | — | Programmable |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Die Revision | — | B-die |