K4A8G085WB-BCPB vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCPB disebabkan oleh Samsung Electronics dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WB-BCPB | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $4.10 | — |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Max Clock Frequency | 1066 MHz | — |
| Max Access Time | 0.18 ns | — |
| Max Standby Current | 0.016 mA | — |
| Refresh Cycles | 8192 | — |
| Technology | CMOS, 8Gb B-die | — |
| Kemasan | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length | 78-FBGA |
| Number of Terminals | 78 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +85C | 0°C to +85°C |
| Antaramuka | DDR4 SDRAM parallel interface | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Temperature Grade | Commercial (0C to 85C) | — |
| Kadar Data | — | 3200 Mbps |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |