K4A8G085WB-BCPB vs K4A8G085WB-BIWE 比較
詳細並排比較 K4A8G085WB-BCPB 由 Samsung Electronics 與 K4A8G085WB-BIWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB-BCPB | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $4.10 | — |
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| 供應電壓 | 1.2 V | 1.2 V |
| Max Clock Frequency | 1066 MHz | — |
| Max Access Time | 0.18 ns | — |
| Max Standby Current | 0.016 mA | — |
| Refresh Cycles | 8192 | — |
| Technology | CMOS, 8Gb B-die | — |
| 封裝 | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length | 78-FBGA |
| Number of Terminals | 78 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +85C | 0°C to +85°C |
| 介面 | DDR4 SDRAM parallel interface | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Temperature Grade | Commercial (0C to 85C) | — |
| 資料速率 | — | 3200 Mbps |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS 延遲 | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |