K4A8G085WB-BCPB vs K4A8G085WB-BIWE Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BCPB dari Samsung Electronics dan K4A8G085WB-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BCPB | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $4,10 | — |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Max Clock Frequency | 1066 MHz | — |
| Max Access Time | 0.18 ns | — |
| Max Standby Current | 0.016 mA | — |
| Refresh Cycles | 8192 | — |
| Technology | CMOS, 8Gb B-die | — |
| Paket | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length | 78-FBGA |
| Number of Terminals | 78 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | 0°C to +85°C |
| Antarmuka | DDR4 SDRAM parallel interface | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Temperature Grade | Commercial (0C to 85C) | — |
| Laju Data | — | 3200 Mbps |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |