K4A8G085WB-BCRC vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BCRC by Samsung Electronics and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC β ActiveSamsung Electronics
K4A8G085WB-BIWE
K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G085WB-BIWE β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCRC | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.80 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 1G x 8 | β |
| Data Rate | 2400 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to +85Β°C |
| Package | 78-ball FBGA | 78-FBGA |
| Number of Terminals | 78 | β |
| Refresh Cycles | 8192 | β |
| Access Time | 0.175 ns | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Technology | CMOS | β |
| Burst Length | 8 and 4 | β |
| On-Die Termination | Yes | β |
| Auto-Refresh | Yes | β |
| Self-Refresh | Yes | β |
| RoHS | Compliant | β |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 1G x 8 |
| Mounting Type | β | Surface Mount |
| Memory Interface | β | Parallel |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| Refresh | β | Auto-refresh, self-refresh |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |