K4A8G085WB-BCRC vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BCRC | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 2400 Mbps | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0°C to 85°C | 0°C to +85°C |
| Kemasan | 78-ball FBGA | 78-FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Jenis Pemasangan | — | Surface Mount |
| Memory Interface | — | Parallel |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |