K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
MPN: K4A8G085WB-BCTD ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.66 | $10.66 |
| 10 | $10.12 | $101.20 |
| 100 | $9.59 | $959.00 |
| 500 | $9.06 | $4,530.00 |
| 1,000 | $8.53 | $8,530.00 |
Drop-in alternatives for K4A8G085WB-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G085WC-BCTD
✅ Drop-In✓ In Stock
$50.85 / Unit
View Datasheet →K4A8G085WB-BCRC
✅ Drop-In✓ In Stock
$6.8 / Unit
View Datasheet →K4A8G085WB-BCPB
✅ Drop-In✓ In Stock
$3.28 / Unit
View Datasheet →K4A8G085WG-BCWE
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G085WB-BCTD0
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G085WB-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 1G x 8 |
| Data Rate | 2666 Mbps |
| Supply Voltage | 1.2 V |
| Die Revision | B-die |
| Package | FBGA-78 (78-ball TFBGA) |
| Mounting Type | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups |
| Burst Length | BL8 |
| Termination | On-Die Termination (ODT), dynamic ODT |
| Features | ZQ calibration, CRC, CA parity, asynchronous reset |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) |
| Terminations | 78 |
| JEDEC-30 Package Code | R-PBGA-B78 |
K4A8G085WB-BCTD r-pbga-b78 Pin Configuration Guide
Complete pinout information for K4A8G085WB-BCTD (r-pbga-b78 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A8G085WB-BCTD.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WB-BCTD is suitable for 6 applications: Embedded Motherboards and Controllers, Networking and Telecom Line Cards, High-Performance Computing and Memory Modules, Industrial Automation and Machine Vision, Test and Measurement Equipment, Automotive-adjacent and Edge Computing Devices.
Embedded Motherboards and Controllers
The K4A8G085WB-BCTD fits embedded x86 and ARM motherboards that require 8Gb density in a compact 78-ball FBGA footprint. Its 1.2V supply keeps power budgets low relative to DDR3 solutions, and the asynchronous RESET# input protects memory contents during board-level power sequencing. In a single-chip-down (1Gx8) configuration, one device provides 1GB of main memory; two devices in a 64-bit bus provide 2GB with ranks configured for interleaving. The B-die's timing margin supports embedded controllers running at conservative 2133/2400 Mbps settings while retaining headroom for firmware tuning. On-die termination reduces external VTT termination component count on two-layer-capable embedded designs, and ZQ calibration keeps output impedance accurate across temperature.
Recommended
Networking and Telecom Line Cards
Network switches, routers, and telecom line cards use DDR4 for packet buffers, lookup tables, and control-plane memory. The K4A8G085WB-BCTD's 2666 Mbps data rate supplies roughly 2.6 GB/s peak bandwidth per 8-bit device, and its 4-bank-group architecture improves effective bandwidth under random access patterns typical of packet processing. CRC and CA parity features on this Samsung B-die detect command/address corruption on high-utilization backplanes, an important reliability feature for always-on telecom equipment. Multiple devices can be arranged in fly-by topology across ranks; dynamic ODT adjusts termination between writes without controller intervention, simplifying signal integrity at these data rates on dense line-card layouts.
Recommended
High-Performance Computing and Memory Modules
Samsung's B-die is the silicon of choice for enthusiast and workstation UDIMM/RDIMM/SODIMM builds because of its documented frequency and timing headroom. The K4A8G085WB-BCTD delivers 8Gb per chip, so a 16-chip unbuffered DIMM reaches 16GB, and the x8 organization supports ECC on x72 module configurations. Module designers value the BCTD bin's 2666 Mbps guaranteed operating point together with headroom toward 3200 Mbps-class timings. SPD EEPROM (per JEDEC module practice) programs the exact CL-tRCD-tRP bin for the host BIOS. CRC and ZQ calibration functions comply with standard DDR4 module reference designs, allowing direct integration into existing DIMM PCB stacks without modification.
Recommended
Industrial Automation and Machine Vision
Industrial PCs, PLCs, and machine-vision frame grabbers need reliable high-bandwidth memory for image buffers and control loops. The K4A8G085WB-BCTD's 1.2V operation reduces heat inside sealed fanless enclosures - important because DRAM refresh and reliability degrade at high junction temperatures. Its 8Gb density supports multiple 4K image frame buffers in vision pipelines, while the 2666 Mbps rate sustains streaming throughput from GigE/USB3 vision sensors. The device's asynchronous RESET# and CRC/CA parity improve fault behavior under noisy factory EMI conditions. For vibration-prone deployments, the lead-free FBGA package's small die-to-ball geometry provides better mechanical robustness than TSOP-era DDR packaging.
Recommended
Test and Measurement Equipment
Oscilloscopes, logic analyzers, and signal generators use large DRAM buffers for waveform capture. The K4A8G085WB-BCTD provides 1GB per device at 2666 Mbps, giving roughly 2.6 GB/s of streaming bandwidth per channel - adequate for sustained acquisition-to-memory transfers when organized in 64-bit-wide arrays. The B-die's timing margin lets instrument designers operate at conservative speeds for maximum noise margin while retaining the option of faster firmware settings in later product tiers. ZQ calibration maintains output impedance accuracy across the instrument's warm-up temperature drift, and the 78-ball FBGA's controlled ball layout eases length-matched routing on the high-layer-count PCBs typical of bench instruments.
Recommended
Automotive-adjacent and Edge Computing Devices
Edge AI gateways, smart-camera NVRs, and in-cabin infotainment platforms use DDR4 DRAM for model execution and video buffering. The K4A8G085WB-BCTD's 8Gb density supports convolutional-neural-network working sets of hundreds of megabytes with headroom, while its 2666 Mbps rate feeds embedded SoC memory controllers rated at DDR4-2666. The 1.2V rail simplifies integration with low-voltage PMICs common in these designs. CRC, CA parity, and dynamic ODT preserve data integrity in electrically noisy vehicle-adjacent environments. Note that this commercial-grade part is not AEC-Q100 qualified; industrial and consumer edge applications are appropriate, while true automotive powertrain use requires Samsung's automotive DDR4 lines.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WB-BCTD — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WC-BCTD | K4A8G085WB-BCRC | K4A8G085WB-BCPB | K4A8G085WG-BCWE | K4A8G085WB-BCTD0 |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 (TFBGA) - same |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | 2666 Mbps | 2400 Mbps | 2400 Mbps | 3200 Mbps | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Revision | B-die | C-die | B-die | B-die | G-die family | B-die |
| Price (qty 1) | $10.66 | $60.05 (LCSC, 2026-08 stock listing) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest documented timing headroom in Samsung 8Gb DDR4 family (vs K4A8G085WC-BCTD)
- 2666 Mbps guaranteed bin over BCRC/BCPB variants (vs K4A8G085WB-BCRC)
- Cost advantage over equivalent-availability listings (vs K4A8G085WC-BCTD)
Design Notes
Route DDR4 address/command/control lines in fly-by topology from the controller through each DRAM to the end of the chain, with per-device length taper. DQ/DQS/DM signals route point-to-point in matched groups with length matching to +/-10 mils intra-group (x8 parts need one DQS pair per byte lane). Reference all signal layers to solid ground planes; keep DDR4 signals off board edges and away from switching regulator inductors. Place series damping resistors only if the controller's design guide requires them - modern DDR4 usually relies on ODT and controller drive strength instead.
Provide a clean 1.2V VDD rail with bulk capacitance plus 0.1uF and 0.01uF ceramics distributed across the DRAM power balls. Generate VREFCA and VREFDQ from a precision DDR4 VDDQ-tracking reference (e.g., a dedicated reference generator) rather than a simple resistor divider when VDD noise exceeds a few millivolts. Estimated: at 2666 Mbps with moderate utilization, per-device current is on the order of hundreds of milliamps - size the VRM per the Samsung/current-calculated IDD figures in the datasheet and your controller's power tool. Place a single 240 ohm 1% resistor from ZQ to GND, as short as possible.
Do not mix speed bins in the same rank/byte lane without validating the weakest-bin timing in firmware - a 2400 Mbps -BCRC part installed in a 2666 Mbps -BCTD socket will fail margin tests if SPD settings assume 2666. RESET# must be asserted low during power ramp per the DDR4 power-ramp sequence, or data corruption and excess current can occur. After any die-revision substitution (B-die to C-die), rerun full read/write margin and training validation - pin compatibility does not guarantee identical timing windows at every operating point.
Compliance Information
RoHS/REACH status not stated in the retrieved web data; verify on the Samsung product page. Not an AEC-Q100 automotive part - this is a commercial/industrial DDR4 component.
