K4A8G085WB-BICH vs K4A8G085WB-BITD Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WB-BITD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WB-BITD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2 V |
| Data Rate | 2400 Mbps (DDR4-2400) | 2666 Mbps |
| Package | 78-ball FBGA | 78FBGA |
| Operating Temperature | 0°C to 85°C | -40°C to +95°C |
| Max Supply Current | 170mA | — |
| Burst Length | BL8, BL16 | — |
| CAS Latency | Programmable | [DATA_NEEDED: CAS Latency] |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Die Revision | B-die | — |
| Mounting Type | — | Surface Mount |
| Number of Pins | — | 78 |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| Interface | — | Parallel |
| RoHS Status | — | Compliant |